- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/1157 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the memory core region with cell select transistors, e.g. NAND
Patent holdings for IPC class H01L 27/1157
Total number of patents in this class: 3296
10-year publication summary
23
|
160
|
342
|
368
|
537
|
693
|
592
|
368
|
276
|
43
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Sandisk Technologies LLC | 5684 |
580 |
Samsung Electronics Co., Ltd. | 131630 |
566 |
Kioxia Corporation | 9847 |
495 |
Micron Technology, Inc. | 24960 |
431 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
417 |
SK Hynix Inc. | 11030 |
217 |
Macronix International Co., Ltd. | 2562 |
76 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
63 |
Renesas Electronics Corporation | 6305 |
45 |
Lodestar Licensing Group LLC | 583 |
44 |
Applied Materials, Inc. | 16587 |
38 |
Intel NDTM US LLC | 373 |
23 |
Sunrise Memory Corporation | 192 |
21 |
Toshiba Memory Corporation | 255 |
17 |
Intel Corporation | 45621 |
14 |
Tokyo Electron Limited | 11599 |
14 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
13 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
13 |
United Microelectronics Corp. | 3921 |
11 |
Infineon Technologies LLC | 597 |
11 |
Other owners | 187 |